A Drain Lag Model for GaN HEMT based on Chalmers Model and Pulsed S-Parameter Measurements
Author: | Peng Luo, Olof Bengtsson, Matthias Rudolph |
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DOI: | https://doi.org/10.1109/MWSYM.2017.8059085 |
ISBN: | 978-1-5090-6360-4 |
Title of the source (English): | IEEE MTT-S International Microwave Symposium (IMS), 4-9 June 2017, Honololu, HI, USA |
Publisher: | IEEE |
Place of publication: | Piscataway, NJ |
Document Type: | Conference Proceeding |
Language: | English |
Year of publication: | 2017 |
First Page: | 240 |
Last Page: | 243 |
Faculty/Chair: | Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / Stiftungsprofessur Hochfrequenz- und Mikrowellentechnik |