Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition

  • A comparative study of thin titanium oxynitride (TiOxNy) films prepared by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium (TDMAT) and N2 plasma as well as titanium(IV)isopropoxide and NH3 plasma is reported. The comparison is based on the combination of Ti2p core level and valence band spectroscopy and current-voltage measurements. The TDMAT/N2 process delivers generally higher fractions of TiN and TiON within the Ti2p spectra of the films and stronger photoemissions within the bandgap as resolved in detail by high energy resolution synchrotron-based spectroscopy. In particular, it is shown that higher TiN contributions and in-gap emission intensities correlate strongly with increased leakage currents within the films and might be modified by the process parameters and precursor selection.

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Author: Małgorzata KotORCiD, Karsten HenkelORCiDGND, Chittaranjan DasORCiD, Simone Brizzi, Irina Kärkkänen, Jessica Schneidewind, Franziska NaumannORCiD, Hassan Gargouri, Dieter SchmeißerORCiD
DOI:https://doi.org/10.1016/j.surfcoat.2016.11.094
ISSN:0257-8972
ISSN:1879-3347
Title of the source (English):Surface and Coatings Technology
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2017
Tag:ALD process parameters; In-gap defect states; Leakage current; Plasma enhanced atomic layer deposition (PEALD); Ti-N contributions; Titanium oxynitride
Volume/Year:324
First Page:586
Last Page:593
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie
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