The texturization process during horizontal acidic etching of multi-crystalline silicon wafers

  • Horizontal wet-chemical etching of silicon wafers in an HF/HNO3/H2SiF6 mixture is the most widely-used technique to texturize multi-crystalline silicon wafers for solar cell production. For the first time, the etch rates were determined separately for the upper and lower side during the horizontal texturization and the their different morphologies. The dependency of the surface morphology from the etch rate and etch depth is proven. Furthermore, the influence of the temperature and stirring rates on the morphological development for the upper and lower side of the wafer were examined. From temperature-dependent measurements, activation energies in the range from 17 kJ/mol to 40 kJ/mol on the upper side and from 23 kJ/mol to 40 kJ/mol on the lower side dependent from the etching time were determined. The observed results reveal a connection between the etch depth, the agitation of the etch solution, the morphology and the reflectivity of the separate wafer sides.

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Metadaten
Author: Birgit Meinel, Tim Koschwitz, Robert HeinemannORCiD, Jörg AckerORCiDGND
URL:http://www.sciencedirect.com/science/article/pii/S136980011400482X
DOI:https://doi.org/10.1016/j.mssp.2014.08.047
ISSN:1369-8001
Title of the source (English):Materials Science in Semiconductor Processing
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2014
Tag:Activation energy
Acidic etching; Confocal microscopy; HF/HNO3 mixture; Reflectivity; Surface properties; silicon
solar cell
Volume/Year:26
First Page:695
Last Page:703
Faculty/Chair:Fakultät 2 Umwelt und Naturwissenschaften / FG Physikalische Chemie
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