Depicting the Electronic Structure of HfO₂ Films by Spectroscopic Techniques

  • The electronic structure of HfO₂ films was investigated. The partial density of states for the valence and the conduction bands was determined by the detailed analysis of the O1s resonance profile by resonant photoelectron spectroscopy. The positions of valence band maximum and conduction band minimum, the excitation range for the polaronic states and the range of charge transfer band were found to be not influenced by the preparation conditions. The band gap was determined to be 6.2 eV and the energy of the charge neutrality level (referred to vacuum level) was determined as 4.7 eV. The Fermi level position was observed to vary about 1.2 eV depending on the preparation conditions, which indicates the presence of charges within the films.

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Metadaten
Author: Silma Alberton Corrêa, Simone Brizzi, Dieter SchmeißerORCiD
DOI:https://doi.org/10.1149/07506.0145ecst
ISSN:1938-6737
ISSN:1938-5862
Title of the source (English):ECS Transactions
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2016
Tag:HfO₂; charge neutrality level; electronic structure; partial density of states; resonant photoelectron spectroscopy (resPES)
Volume/Year:75
Issue number:6
First Page:145
Last Page:153
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie
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