A high-voltage driver based on stacked low-voltage transistors with minimized on-resistance for a buck converter in 65 nm CMOS

  • This paper presents a high-voltage (HV) driver for switching a buck converter. The circuit is based on 3-stacked CMOS using gate control circuits to drive maximum current which indicates minimized on-resistance of the HV-driver thus achieving faster switching. The circuit is designed and fabricated using 65 nm CMOS TSMC process technology with a nominal voltage of 2.5 V and with a supply voltage of 5.5 V. Since the design is based on stacked CMOS transistors, the circuit is technology-independent. The initial on-resistances of the driver pull-up and the pull-down paths have an improvement of 75% and 36% respectively. Due to a buck converter switched by the designed HV-driver, output voltages in the range of 0.45 V to 2.45 V can be achieved from different high supply voltages in the range of 3.5 V to 5.5 V. The circuit occupies an area of 0.187 mm2.

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Metadaten
Author: Sara Pashmineh, Dirk Killat
URL:http://ieeexplore.ieee.org/document/7726692/
DOI:https://doi.org/10.1109/CCECE.2016.7726692
ISBN:978-1-4673-8721-7
ISBN:978-1-4673-8722-4
Title of the source (English):2016 IEEE Canadian Conference on Electrical and Computer Engineering (CCECE), 15-18 May 2016
Publisher:IEEE
Place of publication:Piscataway, NJ
Document Type:Conference Proceeding
Language:English
Year of publication:2016
First Page:1
Last Page:5
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Mikroelektronik
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