A spectroscopic comparison of IGZO thin film and the parent In2O3, Ga2O3, and ZnO single crystals

  • We use resonant photoelectron spectroscopy at the Zn 2p, Ga 2p, In 3d, and O 1s absorption edges to report on the electronic properties of indium–gallium–zinc-oxide thin films. We also compare the data with the respective data of the corresponding single crystals In2O3, Ga2O3, and ZnO. We focus on the elemental composition and, in particular, find no evidence for oxygen deficiency. The In, Ga, and Zn absorption data at resonance can be used to analyze the conduction band states in detail. We deduce that a configuration interaction between d10s0 and d9s1states is of importance. We provided a novel mechanism in which configuration interaction induced gap states create both, extended unoccupied states around E F as well as localized occupied states within the gap.

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Author: Jörg Haeberle, Simone Brizzi, Diana Gaspar, Pedro Barquinha, Zbigniew GalazkaORCiD, Detlev Schulz, Dieter SchmeißerORCiD
DOI:https://doi.org/10.1088/2053-1591/3/10/106302
ISSN:2053-1591
Title of the source (English):Materials Research Express
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2016
Tag:in-gapdefect states; resonant photoelectron spectroscopy; transparent conducting oxides (TCO)
Volume/Year:3
Issue number:10
First Page:106302-1
Last Page:106302-17
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie
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