Depth Profiling of Ultrathin Oxynitride Layers Using Synchrotron Radiation
- To determine the depth structure of samples various destructive (SIMS, depth profiling with sputtering and AES or XPS) and non-destructive techniques (RBS - Rutherford-Back-Scattering) are available. But all methods are less suitable for investigating especially ultrathin (<5nm) layers: While the destructive techniques suffer from Ion-mixing the RBS can not deliver chemical information. Due to the depth-dependent attenuation of photo-electrons XPS also contains depth information. As XPS gives only a sum signal across the layer one needs to modify the Inelastic Mean Free Path (IMFP) of the photo-electrons to vary the depth information in the photo-electron spectra. This can be done by changing the kinetic energy with the use of different excitation energies delivered from a Synchrotron. Using this method we were able to investigate the chemical depth structure of silicon oxynitride layers. The layers were grown on Si(111) by a N2O-treatment. The depth profile of that layer shows a silicon nitride layer forming the interfaceTo determine the depth structure of samples various destructive (SIMS, depth profiling with sputtering and AES or XPS) and non-destructive techniques (RBS - Rutherford-Back-Scattering) are available. But all methods are less suitable for investigating especially ultrathin (<5nm) layers: While the destructive techniques suffer from Ion-mixing the RBS can not deliver chemical information. Due to the depth-dependent attenuation of photo-electrons XPS also contains depth information. As XPS gives only a sum signal across the layer one needs to modify the Inelastic Mean Free Path (IMFP) of the photo-electrons to vary the depth information in the photo-electron spectra. This can be done by changing the kinetic energy with the use of different excitation energies delivered from a Synchrotron. Using this method we were able to investigate the chemical depth structure of silicon oxynitride layers. The layers were grown on Si(111) by a N2O-treatment. The depth profile of that layer shows a silicon nitride layer forming the interface between the silicon substrate and the oxynitride.…
Author: | Patrick Hoffmann, Dieter SchmeißerORCiD |
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URL: | http://www.dpg-verhandlungen.de/year/2003/conference/dresden/part/o/session/12/contribution/36?lang=de |
Title of the source (German): | Verhandlungen der Deutschen Physikalischen Gesellschaft |
Publisher: | Deutsche Physikalische Gesellschaft |
Place of publication: | Bad Honnef |
Document Type: | Conference Proceeding |
Language: | English |
Year of publication: | 2003 |
Tag: | X-ray photoelectron spectroscopy; depth profiling; oxynitride |
Series ; volume number: | Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Band 38 |
Faculty/Chair: | Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie |