Stability and electronic properties of silicates in the system SiO2 - Pr2O3 - Si(001)
- Hetero- oxides are the candidates to replace SiO2 as the gate dielectric material for sub-0.1µm CMOS technology. In particular, the basic interaction mechanisms at the interface are a key issue and a solid knowledge of these mechanisms is required to address reliability issues. The challenge in material science is to understand the chemical bonding of the hetero oxides and Si on a microscopic scale. This report focuses on the interaction of the high dielectric constant (DK) material Pr2O3 with SiO2 and the bare Si(001) surface. Photoelectron spectroscopy (PES) using tunable Synchrotron radiation (undulator U49/2 at BESSY II) is shown to provide spectroscopic information which is used for characterization of the electronic structure elements at the interface as well as for a non-destructive depth profiling. The chemical state of the Si atoms at the interface is identified and the chemical stability of the various oxide phases is discussed. We determine the variation of the elemental composition across the interface and follow theHetero- oxides are the candidates to replace SiO2 as the gate dielectric material for sub-0.1µm CMOS technology. In particular, the basic interaction mechanisms at the interface are a key issue and a solid knowledge of these mechanisms is required to address reliability issues. The challenge in material science is to understand the chemical bonding of the hetero oxides and Si on a microscopic scale. This report focuses on the interaction of the high dielectric constant (DK) material Pr2O3 with SiO2 and the bare Si(001) surface. Photoelectron spectroscopy (PES) using tunable Synchrotron radiation (undulator U49/2 at BESSY II) is shown to provide spectroscopic information which is used for characterization of the electronic structure elements at the interface as well as for a non-destructive depth profiling. The chemical state of the Si atoms at the interface is identified and the chemical stability of the various oxide phases is discussed. We determine the variation of the elemental composition across the interface and follow the stability of the silicate phase.…
Author: | Dieter SchmeißerORCiD, Hans-Joachim Müssig |
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URL: | http://www.dpg-verhandlungen.de/year/2004/conference/regensburg/part/hl/session/31/contribution/3?lang=de |
Title of the source (English): | Verhandlungen der Deutschen Physikalischen Gesellschaft |
Publisher: | Deutsche Physikalische Gesellschaft |
Place of publication: | Bad Honnef |
Document Type: | Conference Proceeding |
Language: | English |
Year of publication: | 2004 |
Tag: | Pr2O3; X-ray photoelectron spectroscopy (XPS); high-k; silicate |
Series ; volume number: | Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Band 39 |
Faculty/Chair: | Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie |