Growth and Characterization of 3C-SiC thin films on Si substrates

  • This work reports on the growth and characterization of cubic silicon carbide thin films. A cold wall low pressure chemical vapour deposition (LPCVD) system has been used to grow the cubic silicon carbide. The two step method, carbonization and subsequent growth, has been used to grow good quality 3C-SiC thin films. The composition and structure of deposited thin films have been analysed by Fourier Transform Infrared Spectroscopy (FTIR), XPS and X-Ray Diffractometry (XRD). The structural quality of the films has been optimized as a function of substrate temperature during carbonization and growth. X-rays diffraction measurements shows that the grown layers are highly oriented crystalline cubic silicon carbide.

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Metadaten
Author: Rakesh Sohal, Karsten HenkelORCiDGND, Klaus Müller, Dieter SchmeißerORCiD
URL:http://www.dpg-verhandlungen.de/year/2005/conference/berlin/part/hl/session/58/contribution/50?lan=en
Title of the source (German):Verhandlungen der Deutschen Physikalischen Gesellschaft
Publisher:Deutsche Physikalische Gesellschaft
Place of publication:Bad Honnef
Document Type:Conference Proceeding
Language:English
Year of publication:2005
Tag:3C-SiC; Fourier Transform Infrared Spectroscopy (FTIR); X-Ray diffraction; X-ray photoelectron spectroscopy (XPS); low pressure chemical vapor deposition (LPCVD)
Series ; volume number:Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Band 40
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie
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