The initial interaction of Pr2O3 to (001) and (111) oriented Si substrates
- The high surface sensitivity of synchrotron based core level spectroscopy is employed to study the initial growth of Pr2O3 on Si(001) and Si(111) substrates. The Si2p core levels are different for the two substrates when the exposure is below 1nm. The core level shifts indicate a single bonding of the oxide on the terminal Si atom in Si(111) while on Si(001) the two dangling bonds are reactive. On both surfaces a significant broadening in the substrate emission is found and interpreted in terms of non bonding Si atoms located at the interface. Upon increasing the Pr2O3 exposure above 1nm the Si back bonds in the first Si layer are attacked to form Si - O - Pr bonds which cause a silicate like core level shift.
Author: | Dieter SchmeißerORCiD |
---|---|
URL: | http://www.dpg-verhandlungen.de/year/2005/conference/berlin/part/ds/session/11/contribution/2?lan=en |
Title of the source (English): | Verhandlungen der Deutschen Physikalischen Gesellschaft |
Publisher: | Deutsche Physikalische Gesellschaft |
Place of publication: | Bad Honnef |
Document Type: | Conference Proceeding |
Language: | English |
Year of publication: | 2005 |
Tag: | Pr2O3; X-ray photoelectron spectroscopy (XPS); high-k |
Series ; volume number: | Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Band 40 |
Faculty/Chair: | Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie |