Composition and thermal stability of thin functional oxidic (Pr, La, Y) and metallic (Ru, Ti) layers on Si and SiC substrates
- Thin Pr-, La- and Y- based oxide layers for applications as gate dielectric in metal-oxide-semiconductor (MOS) structures are investigated with x-ray photoelectron spectroscopy. The films with a thickness of around 2nm have been prepared on Si and SiC wafers by various chemical deposition methods based on nitrate solutions. In addition, we report on Ti- and Ru- based metal contacts prepared in the same way. The film composition is analysed and annealing steps in vacuum up to 900∘C have been applied to test their thermal stability. The interface characteristics, surface composition and thermal stability of MOS functional multilayers have been studied and will be presented.
Author: | Andriy Styervoyedov, Ioanna Paloumpa, Dieter SchmeißerORCiD |
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URL: | http://www.dpg-verhandlungen.de/year/2005/conference/berlin/part/ds/session/24/contribution/17?lan=en |
Title of the source (German): | Verhandlungen der Deutschen Physikalischen Gesellschaft |
Publisher: | Deutsche Physikalische Gesellschaft |
Place of publication: | Bad Honnef |
Document Type: | Conference Proceeding |
Language: | English |
Year of publication: | 2005 |
Tag: | MOS transistor Pr-, La- and Y- based oxides; X-Ray photoelectron spectroscopy; high-k |
Series ; volume number: | Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Band 40 |
Faculty/Chair: | Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie |