Composition and thermal stability of thin functional oxidic (Pr, La, Y) and metallic (Ru, Ti) layers on Si and SiC substrates

  • Thin Pr-, La- and Y- based oxide layers for applications as gate dielectric in metal-oxide-semiconductor (MOS) structures are investigated with x-ray photoelectron spectroscopy. The films with a thickness of around 2nm have been prepared on Si and SiC wafers by various chemical deposition methods based on nitrate solutions. In addition, we report on Ti- and Ru- based metal contacts prepared in the same way. The film composition is analysed and annealing steps in vacuum up to 900∘C have been applied to test their thermal stability. The interface characteristics, surface composition and thermal stability of MOS functional multilayers have been studied and will be presented.

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Author: Andriy Styervoyedov, Ioanna Paloumpa, Dieter SchmeißerORCiD
URL:http://www.dpg-verhandlungen.de/year/2005/conference/berlin/part/ds/session/24/contribution/17?lan=en
Title of the source (German):Verhandlungen der Deutschen Physikalischen Gesellschaft
Publisher:Deutsche Physikalische Gesellschaft
Place of publication:Bad Honnef
Document Type:Conference Proceeding
Language:English
Year of publication:2005
Tag:MOS transistor
Pr-, La- and Y- based oxides; X-Ray photoelectron spectroscopy; high-k
Series ; volume number:Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Band 40
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie
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