CVD and ALD deposited hafnia: an XPS study

  • In this work we report on Hafnium oxide deposited on silicon by means of chemical vapour deposition (CVD) and atomic layer deposition (ALD) using tetrakis-di-methyl-amino-Hf (TDMAHf) and water as precursors. We have studied the behavior of ALD and CVD at intermediate temperatures: ALD was performed outside the ALD window (T>300∘C), whereas CVD was performed at low temperatures, approaching the ALD window (T<400∘C). In this way we wanted to elucidate about the possibility of taking advantage of the conformality of ALD films and the high growth rate of CVD at the same time. Comparable sets of samples prepared with the two methods were measured by X-ray photoelectron spectroscopy and atomic force microscopy in order to determine differences between them: growth rate, Hf/O ratio, valence band positions and roughness are discussed and compared as a function of deposition temperature and process parameters.

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Metadaten
Author: Simone Brizzi, Massimo TallaridaORCiD, Dieter SchmeißerORCiD
URL:http://www.dpg-verhandlungen.de/year/2013/conference/regensburg/part/ds/session/30/contribution/1?lang=de
Title of the source (German):Verhandlungen der Deutschen Physikalischen Gesellschaft
Publisher:Deutsche Physikalische Gesellschaft
Place of publication:Bad Honnef
Document Type:Conference Proceeding
Language:English
Year of publication:2013
Tag:HfO2; X-Ray photoelectron spectroscopy; atomic layer deposition (ALD); chemical vapor deposition
Series ; volume number:Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Band 48
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie
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