Gap states in the electronic structure of SnO2 single crystals and amorphous SnOxthin films

  • The electronic structure of a SnO2 single crystal is determined by employing resonant photoelectron spectroscopy. We determine the core level, valence band, and X-ray absorption (XAS) data and compare these with those of amorphous SnOx thin films. We find similar properties concerning the data of the core levels, the valence band features, and the absorption data at the O1s edge. We find strong signals arising from intrinsic in-gap states and discuss their origin in terms of polaronic and charge-transfer defects. We deduce from the XAS data recorded at the Sn3d edge that the Sn4d10 ground state has contributions of 4d9 and 4d8 states due to configuration interaction. We identify localized electronic states depending on the strength of the 4d-5s5p interaction and of the O2p-to-Sn4d charge-transfer processes, both appear separated from the extended band-like states of the conduction band. For the amorphous SnOx thin films, significant differences are found only in the absorption data at the Sn3d-edge due to a stronger localizationThe electronic structure of a SnO2 single crystal is determined by employing resonant photoelectron spectroscopy. We determine the core level, valence band, and X-ray absorption (XAS) data and compare these with those of amorphous SnOx thin films. We find similar properties concerning the data of the core levels, the valence band features, and the absorption data at the O1s edge. We find strong signals arising from intrinsic in-gap states and discuss their origin in terms of polaronic and charge-transfer defects. We deduce from the XAS data recorded at the Sn3d edge that the Sn4d10 ground state has contributions of 4d9 and 4d8 states due to configuration interaction. We identify localized electronic states depending on the strength of the 4d-5s5p interaction and of the O2p-to-Sn4d charge-transfer processes, both appear separated from the extended band-like states of the conduction band. For the amorphous SnOx thin films, significant differences are found only in the absorption data at the Sn3d-edge due to a stronger localization of the in-gap states.show moreshow less

Export metadata

Additional Services

Search Google Scholar
Metadaten
Author: Jörg Haeberle, Stephan Machulik, Christoph JanowitzORCiD, Recardo Manzke, Diana Gaspar, Pedro Barquinha, Dieter SchmeißerORCiD
DOI:https://doi.org/10.1063/1.4962313
ISSN:0021-8979
ISSN:1089-7550
Title of the source (English):Journal of Applied Physics
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2016
Tag:SnO2; electronic structure; gap states; resonant photoelectron spectroscopy (resPES)
Volume/Year:120
Issue number:10
First Page:105101-1
Last Page:105101-13
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie
Einverstanden ✔
Diese Webseite verwendet technisch erforderliche Session-Cookies. Durch die weitere Nutzung der Webseite stimmen Sie diesem zu. Unsere Datenschutzerklärung finden Sie hier.