Measurement and modelling of sensitivity and noise of MOS magnetic field-effect transistors

  • The characteristics of magnetic field-sensitive split-drain MOSFETs (MAGFETs) have been experimentally measured. The sensitivity depends on the geometry and the operating point of the MAGFET. Particular attention is paid to the lateral parasitic conductance between the split drains. The equivalent spectral noise density of the magnetic flux density is measured. Additionally, a macro-model of the MAGFET has been developed for SPICE.

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Author: Dirk Killat, Johannes von Kluge, Frank Umbach, Werner A. Langenheinrich, Richard Schmitz
DOI:https://doi.org/10.1016/S0924-4247(97)80286-5
ISSN:0924-4247
Title of the source (English):Sensors and Actuators : A, Physical
Document Type:Scientific journal article not peer-reviewed
Language:English
Year of publication:1997
Tag:Magfets; Modelling; Mosfets
Volume/Year:61
Issue number:1-3
First Page:346
Last Page:351
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Mikroelektronik
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