A model for statistical electromigration simulation with dependence on capping layer and Cu microstructure in two dimensions

  • A model has been developed to simulate electromigration degradation in an interconnect segment in two dimensions using finite differences. The model was deployed on a parallel computer to statistically assess the lifetimes. The simulation takes into account the diffusion paths for electromigration mass transport along the grain boundaries and the capping layer. The microstructure is generated with a Monte Carlo algorithm, using a modified Potts model. Diffusivities along the grain boundaries and the capping layers were applied as multiples of a base diffusivity and were statistically scattered. The simulation results correlate well with electromigration tests.

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Metadaten
Author: Matthias Kraatz, Martin Gall, Ehrenfried ZschechORCiD, Dieter SchmeißerORCiD, Paul S. Ho
DOI:https://doi.org/10.1016/j.commatsci.2016.04.020
ISSN:1879-0801
ISSN:0927-0256
Title of the source (English):Computational Materials Science
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2016
Tag:2D; Computer simulation; Copper Interconnects; Electromigration; Grain growth; On-chip; Parallel computing; Statistics
Volume/Year:120
First Page:29
Last Page:35
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie
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