A spectroscopic comparison of AOS thin films and TCO single crystals

  • Amorphous oxide semiconductors (AOS) and transparent conductive oxides (TCO) are today one of most attractive fields of research in many industrial products, like e.g. high definition, low cost, transparent, and flexible displays. We got the unique possibility to measure a-GIZO and a-SnOx thin films and compare their electronic properties with those of In2O3, Ga2O3, ZnO, and SnO2 single crystals. We use resPES to study the electronic properties. We report on the core levels, the VB PES data, partial Integrated Yield (pIY) and the XAS absorption data. From these we are able to derive the elemental ratio, the pDOS as well as the band scheme. At the O1s resonance we observe multiple Auger processes from which we deduce that a band of localized defect states is located between the Fermi energy and the CBM. The resonant profiles taken at the corresponding metal edges indicate that metal states are involved in the DOS.

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Author: Jörg Haeberle, Diana Gaspar, Pedro Barquinha, Stephan Machulik, Christoph JanowitzORCiD, Zbigniew GalazkaORCiD, Dieter SchmeißerORCiD
URL:http://www.dpg-verhandlungen.de/year/2014/conference/dresden/part/hl/session/107/contribution/15?lang=en
Title of the source (German):Verhandlungen der Deutschen Physikalischen Gesellschaft
Publisher:Deutsche Physikalische Gesellschaft
Place of publication:Bad Honnef
Document Type:Conference Proceeding
Language:English
Year of publication:2014
Tag:Amorphous oxide semiconductors (AOS); GIZO; Ga2O3; In2O3; SnO2; Transparent conductive oxides (TCO); ZnO; resonant photoelectron spectroscopy
Series ; volume number:Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Band 49
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie
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