Structural changes in HfO2 thin films: thickness and doping dependence
- In this work we show results regarding MOCVD and ALD HfO2 as well as Al-doped HfO2. We use Synchrotron Radiation Photoemission Spectroscopy (SRPES) to determine Hf/O atomic ratios and X-ray Absorption Spectroscopy (XAS) to investigate the electronic properties related to their crystallization. MOCVD films are synthesized at temperatures ranging from ambient to 400∘C and show structures from completely amorphous to monoclinic. ALD films are amorphous as deposited, and can crystallize after post-deposition anneal depending on the percentage of Al-doping. We discuss PES results in order to determine how close to stoichiometry the Hf/O atomic ratios of the films are, as well as the doping level. From XAS data, instead, we can point out how orbital hybridizations are related to structural and physical properties.
Author: | Simone Brizzi, Massimo TallaridaORCiD, Christoph AdelmannORCiD, Lars-Åke Ragnarsson, Sven van Elshocht, Dieter SchmeißerORCiD |
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URL: | http://www.dpg-verhandlungen.de/year/2014/conference/dresden/part/ds/session/49/contribution/9?lang=en |
ISSN: | 0420-0195 |
Title of the source (German): | Verhandlungen der Deutschen Physikalischen Gesellschaft |
Publisher: | Deutsche Physikalische Gesellschaft |
Place of publication: | Bad Honnef |
Document Type: | Conference Proceeding |
Language: | English |
Year of publication: | 2014 |
Tag: | HfO2 thin films; Structure; atomic layer deposition (ALD); doping dependence; thickness dependence |
Series ; volume number: | Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Band 49 |
Faculty/Chair: | Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie |