Structural changes in HfO2 thin films: thickness and doping dependence

  • In this work we show results regarding MOCVD and ALD HfO2 as well as Al-doped HfO2. We use Synchrotron Radiation Photoemission Spectroscopy (SRPES) to determine Hf/O atomic ratios and X-ray Absorption Spectroscopy (XAS) to investigate the electronic properties related to their crystallization. MOCVD films are synthesized at temperatures ranging from ambient to 400∘C and show structures from completely amorphous to monoclinic. ALD films are amorphous as deposited, and can crystallize after post-deposition anneal depending on the percentage of Al-doping. We discuss PES results in order to determine how close to stoichiometry the Hf/O atomic ratios of the films are, as well as the doping level. From XAS data, instead, we can point out how orbital hybridizations are related to structural and physical properties.

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Metadaten
Author: Simone Brizzi, Massimo TallaridaORCiD, Christoph AdelmannORCiD, Lars-Åke Ragnarsson, Sven van Elshocht, Dieter SchmeißerORCiD
URL:http://www.dpg-verhandlungen.de/year/2014/conference/dresden/part/ds/session/49/contribution/9?lang=en
ISSN:0420-0195
Title of the source (German):Verhandlungen der Deutschen Physikalischen Gesellschaft
Publisher:Deutsche Physikalische Gesellschaft
Place of publication:Bad Honnef
Document Type:Conference Proceeding
Language:English
Year of publication:2014
Tag:HfO2 thin films; Structure; atomic layer deposition (ALD); doping dependence; thickness dependence
Series ; volume number:Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Band 49
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie
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