Comparison of charge neutrality level of Cu/CuO/HfO2 and Si/SiO2/HfO2
- Copper Oxide (CuO) is a promising metal oxide semiconductor, which can be used in different applications, such as catalysis, solar energy conversion, and water splitting. In this work, we use resonance photoemission spectroscopy (ResPES) to analyse the electronics properties of HfO2 films deposited on Cu/CuO and Si/SiO2. For that, we deposited 10 cycles of HfO2 by atomic layer deposition (ALD) on Cu/CuO and Si/SiO2 samples and investigated the density states for the valence and conduction bands which were determined by the detailed analysis of the O1s resonance profile obtained by ResPES. We compared the positions of valence band maximum and conduction band minimum, the excitation range for the polaronic states and the range of charge transfer band in Cu/CuO/HfO2 and Si/SiO2/HfO2. Also, we determined the band gap and the charge neutrality level (CNL).
Author: | Zied Rouissi, Simone Brizzi, Silma Alberton Corrêa, Massimo TallaridaORCiD, Dieter SchmeißerORCiD |
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URL: | http://www.dpg-verhandlungen.de/year/2015/conference/berlin/part/ds/session/36/contribution/47?lang=en |
ISSN: | 0420-0195 |
Title of the source (German): | Verhandlungen der Deutschen Physikalischen Gesellschaft |
Publisher: | Deutsche Physikalische Gesellschaft |
Place of publication: | Bad Honnef |
Document Type: | Conference Proceeding |
Language: | English |
Year of publication: | 2015 |
Tag: | HfO2; charge neutrality level (CNL); resonant photoelectron spectroscopy |
First Page: | 208 |
Series ; volume number: | Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Band 50 |
Faculty/Chair: | Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie |