Study of atomic layer deposition with scanning tunneling microscopy

  • We present a work concerning the study of the initial steps of atomic layer deposition (ALD) with scanning tunneling microscopy (STM). We focus on the role of the substrates which has been often neglected.However, the detailed knowledge of precursor-substrate reactions is important for the understanding of how ALD proceeds. We report on the reaction of the Al-precursor, trimethyl-Al (TMA), on nanostructured surfaces such as Ag nanoclusters and nanostripes prepared by thermal evaporation on HOPG. We characterized the surface before and after one TMA adsorption pulse at room temperature, observing that the morphology of step edges changes after TMA creating a new terraces with a width of 7-10 nm, translated in the direction of the TMA deposition. This shows that, in case of a regular stepped surface, the substrate morphology would keep the same regularity with the translation in a direction privileged by the precursor absorption.

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Metadaten
Author: Zied Rouissi, Massimo TallaridaORCiD, Dieter SchmeißerORCiD
ISSN:0420-0195
Title of the source (German):Verhandlungen der Deutschen Physikalischen Gesellschaft
Publisher:Deutsche Physikalische Gesellschaft
Place of publication:Bad Honnef
Document Type:Conference Proceeding
Language:English
Year of publication:2015
Tag:Al2O3; Atomic layer deposition (ALD); Scanning tunneling microscopy (STM)
First Page:S. 401
Series ; volume number:Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Band 50
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie
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