The Electronic Structure of amorphuos SnOx thin films and SnO2 single crystals
- We compare the electronic properties of amorphous p-type SnOx thin film grown by rf magnetron sputtering with those of n-type SnO2 single crystals grown by cvt. We use resPES to study the electronic band structure. We measure the core levels, the VB PES data, partial Integrated Yield (pIY) and the XAS absorption data. From the resPES data recorded at the O1s and the Sn3d edges we derive the VB pDOS and the CB pDOS . The differences are most pronounced in the position of the VBM as for the a-SnOx films there appears a band closer to the Fermi energy. In addition for the SnOx we find in the XAS and pIY data a significant peak that appears right at the Fermi energy. This peak is absent in the single crystalline data. We attribute this to a change in the configuration of the Sn4d states to form a 4d8 configuration instead of 4d9 and 4d10 configurations which are identified in the single crystalline data.
Author: | Jörg Haeberle, Diana Gaspar, Pedro Barquinha, Luís Pereira, Rodrigo Martins, Elvira Fortunato, Stephan Machulik, Christoph JanowitzORCiD, Recardo Manzke, Dieter SchmeißerORCiD |
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URL: | http://www.dpg-verhandlungen.de/year/2015/conference/berlin/part/hl/session/21/contribution/17?lang=en |
ISSN: | 0420-0195 |
Title of the source (English): | Verhandlungen der Deutschen Physikalischen Gesellschaft |
Publisher: | Deutsche Physikalische Gesellschaft |
Place of publication: | Bad Honnef |
Document Type: | Conference Proceeding |
Language: | English |
Year of publication: | 2015 |
Tag: | SnO2; electronic structure |
First Page: | S. 271 |
Series ; volume number: | Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Band 50 |
Faculty/Chair: | Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie |