Design of a high-voltage driver based on low-voltage CMOS with an adapted level shifter optimized for a wide range of supply voltage
- This paper presents the design of a high-voltage driver with an adapted level shifter for switching converters. The proposed HV-driver and level shifter are based on stacked standard CMOS, therefore the design is technology independent. The circuit is designed in 65-nm TSMC technology with a nominal voltage of 2.5 V and optimized for arbitrary supply voltages from 2.6 V to 6.0 V. This range is extended by 41.7% when compared against common drivers and level shifters with the circuit being suitable for a supply voltage range of 2.4 V between 2.6 V and 5.0 V. The total area of the designed level shifter is about 3.8% of that required for similar circuit in previous work.
Author: | Sara Pashmineh, Dirk Killat |
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DOI: | https://doi.org/10.1109/ICECS.2015.7440235 |
Title of the source (English): | 2015 IEEE International Conference on Electronics, Circuits, and Systems (ICECS), Cairo, Egypt, 6-9 Dec. 2015 |
Publisher: | IEEE |
Document Type: | Conference Proceeding |
Language: | English |
Year of publication: | 2015 |
First Page: | 5 |
Last Page: | 8 |
Faculty/Chair: | Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Mikroelektronik |
Institution name at the time of publication: | Fakultät für Maschinenbau, Elektrotechnik und Wirtschaftsingenieurwesen (eBTU) / LS Mikroelektronik |