Intrinsic localized gap states in IGZO and its parent single crystalline TCOs

  • We report on the X-ray absorption data for Indium–Gallium–Zink–Oxide thin films, amorphous ZnO films, amorphous SnOx films, and single crystalline In2O3, Ga2O3, ZnO, and SnO2 data. These absorption data probe the empty conduction band states explicitly. Also they allow for an elemental assignment using resonant excitation to derive the contributions of each metal ion. We find that the lowest states appear right at the Fermi energy and result from configuration interaction induced charge transfer states which we consider as intrinsic gap states.

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Metadaten
Author: Dieter SchmeißerORCiD, Jörg Haeberle
DOI:https://doi.org/10.1016/j.tsf.2016.02.010
ISSN:0040-6090
ISSN:1879-2731
Title of the source (English):Thin Solid Films
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2016
Tag:Electronic band structure; Intrinsic localized gap states; Resonant photoemission spectroscopy; Transparent conducting oxide; X-ray absorption spectroscopy; X-ray photoelectron spectroscopy
Issue number:603
First Page:206
Last Page:211
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie
Institution name at the time of publication:Fakultät für Mathematik, Naturwissenschaften und Informatik (eBTU) / LS Angewandte Physik / Sensorik
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