Electronic structure of amorphous ZnO films

  • We use resonant photoemission spectroscopy (resPES) to study the electronic properties of amorphous ZnO (a-ZnO) layers. We report on the core levels, the valence band (VB) PES data, and the X-ray absorption (XAS) data which we use for the conduction band (CB) density of states. From these results we are able to derive the partial density of states (pDOS) of O2p and Zn4s4p states in the VB and CB, respectively as well as a band scheme. At the O1s resonance we observe a band of localized defect states which is located between the Fermi energy and the CBM. At the Zn2p edge the XAS data indicate that localized Zn4s4p states are involved in the DOS starting already at the Fermi energy.

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Author: Dieter SchmeißerORCiD, Jörg Haeberle, Pedro Barquinha, Diana Gaspar, Luís Pereira, Rodrigo Martins, Elvira Fortunato
DOI:https://doi.org/10.1002/pssc.201400010
ISSN:1610-1642
Title of the source (English):Physica Status Solidi C
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2014
Tag:a-ZnO thin films; amorphous oxide semiconductors (AOS); charge transfer; intrinsic defects; resonant PES; transparent conducting oxides (TCO)
Volume/Year:11
Issue number:9-10
First Page:1476
Last Page:1480
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie
Institution name at the time of publication:Fakultät für Mathematik, Naturwissenschaften und Informatik (eBTU) / LS Angewandte Physik / Sensorik
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