Virtual GaN substrates via Sc2O3/Y2O3 buffers on Si(111): TEM Characterization of growth defects
Author: | T. Niermann, D. Zengler, Lidia Lupina Tarnawska, Peter Storck, Thomas Schroeder |
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ISSN: | 0021-8979 |
Title of the source (English): | Journal of Applied Physics |
Document Type: | Scientific journal article peer-reviewed |
Language: | English |
Year of publication: | 2013 |
Volume/Year: | 113 |
Issue number: | 22 |
First Page: | 223501 |
Last Page: | 223501-8 |
Faculty/Chair: | Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Halbleitermaterialien |
Institution name at the time of publication: | Fakultät für Mathematik, Naturwissenschaften und Informatik (eBTU) / LS Halbleitermaterialien |