G. Sonia, E. Richter, F. Brunner, A. Denker, R. Lossy, Friedrich Lenk, J. Opitz-Coutureau, M. Mai, J. Schmidt, U. Zeimer, L. Wang, K. Baskar, M. Weyers, Joachim Würfl, Günther Tränkle
- The effect of proton, carbon, oxygen and krypton irradiation on AlGaN HFET devices has been studied. Irradiation was performed at 68 and 120 MeV with fluences in the range from 1 × 10^7 to 1 × 10^13 cm2 . Before and after irradiation, dc and pulsed I – V characteristics, loadpull and S -parameters of the AlGaN HFET devices were measured. A thick GaN reference layer was characterized by x-ray diffraction, photoluminescence and Hall measurements before and after irradiation. Proton, carbon and oxygen irradiation show no degradation in devices while krypton irradiation shows a small change at a fluence of 1 × 10 10 cm2 in the device characteristics. The device results are correlated with the thick GaN results.