High energy irradiation effects on AlGaN/GaN HFET devices

  • The effect of proton, carbon, oxygen and krypton irradiation on AlGaN HFET devices has been studied. Irradiation was performed at 68 and 120 MeV with fluences in the range from 1 × 10^7 to 1 × 10^13 cm2 . Before and after irradiation, dc and pulsed I – V characteristics, loadpull and S -parameters of the AlGaN HFET devices were measured. A thick GaN reference layer was characterized by x-ray diffraction, photoluminescence and Hall measurements before and after irradiation. Proton, carbon and oxygen irradiation show no degradation in devices while krypton irradiation shows a small change at a fluence of 1 × 10 10 cm2 in the device characteristics. The device results are correlated with the thick GaN results.

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Author: G. Sonia, E. Richter, F. Brunner, A. Denker, R. Lossy, Friedrich LenkGND, J. Opitz-Coutureau, M. Mai, J. Schmidt, U. Zeimer, L. Wang, K. Baskar, M. Weyers, Joachim Würfl, Günther Tränkle
DOI:https://doi.org/10.1088/0268-1242/22/11/007
ISSN:0268-1242
Title of the source (English):Semiconductor Science and Technology
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2007
Volume/Year:22
Issue number:11
First Page:1220
Last Page:1224
Faculty/Chair:Fakultät 3 Maschinenbau, Elektro- und Energiesysteme / FG Nachrichtentechnik
Institution name at the time of publication:Fakultät für Ingenieurwissenschaften und Informatik (eHL) / Prof. Nachrichtentechnik
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