A new design approach for low phase-noise reflection-type MMIC oscillators

  • In this paper, optimization of the loaded quality factor Q<sub>L</sub> for reflection-type heterojunction bipolar transistor (HBT) oscillators is investigated. The main result is an optimum relation between the S-parameter phases at the three transistor ports. A new design strategy for this type of oscillator is proposed. The analysis is verified by comparing several Ka-band monolithic-microwave integrated-circuit oscillators in GaAs HBT technology with different resonators. The measured loaded Q<sub>L</sub> values correspond to the measured phase noise of the circuits. At an oscillation frequency of 33 GHz, an excellent phase noise of -87 dBc/Hz at 100-kHz offset frequency is achieved over the whole tuning range.

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Metadaten
Author: Friedrich LenkGND, Matthias Schott, Jochen Hilsenbeck, Wolfgang Heinrich
DOI:https://doi.org/10.1109/TMTT.2004.837319
ISSN:0018-9480
Title of the source (English):IEEE transactions on microwave theory and techniques
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2004
Volume/Year:52
Issue number:12
First Page:2725
Last Page:2731
Faculty/Chair:Fakultät 3 Maschinenbau, Elektro- und Energiesysteme / FG Nachrichtentechnik
Institution name at the time of publication:Fakultät für Ingenieurwissenschaften und Informatik (eHL) / Prof. Nachrichtentechnik
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