Improved parameter extraction of small-sized FETs for low-power applications
- In low-power applications FETs with small gate width are required. For such devices common extraction methods fail. In particular, extracting source inductance and drain pad capacitance using "cold"-FET measurements is no longer possible. We present an improved method that allows reliable extraction of extrinsic elements for small-sized FETs.
Author: | Friedrich LenkGND, Ralf Dörner |
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DOI: | https://doi.org/10.1109/MWSYM.2000.862233 |
ISBN: | 0-7803-5687-X |
Title of the source (English): | 2000 IEEE MTT-S International Microwave Symposium digest, June 11 - 16, 2000, Hynes Convention Center, Boston, Massachusetts, vol. 3 |
Publisher: | IEEE Service Center |
Place of publication: | Piscataway, NJ |
Document Type: | Conference Proceeding |
Language: | English |
Year of publication: | 2000 |
First Page: | 1389 |
Last Page: | 1392 |
Faculty/Chair: | Fakultät 3 Maschinenbau, Elektro- und Energiesysteme / FG Nachrichtentechnik |
Institution name at the time of publication: | Fakultät für Ingenieurwissenschaften und Informatik (eHL) / Prof. Nachrichtentechnik |