Improved parameter extraction of small-sized FETs for low-power applications

  • In low-power applications FETs with small gate width are required. For such devices common extraction methods fail. In particular, extracting source inductance and drain pad capacitance using "cold"-FET measurements is no longer possible. We present an improved method that allows reliable extraction of extrinsic elements for small-sized FETs.

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Metadaten
Author: Friedrich LenkGND, Ralf Dörner
DOI:https://doi.org/10.1109/MWSYM.2000.862233
ISBN:0-7803-5687-X
Title of the source (English):2000 IEEE MTT-S International Microwave Symposium digest, June 11 - 16, 2000, Hynes Convention Center, Boston, Massachusetts, vol. 3
Publisher:IEEE Service Center
Place of publication:Piscataway, NJ
Document Type:Conference Proceeding
Language:English
Year of publication:2000
First Page:1389
Last Page:1392
Faculty/Chair:Fakultät 3 Maschinenbau, Elektro- und Energiesysteme / FG Nachrichtentechnik
Institution name at the time of publication:Fakultät für Ingenieurwissenschaften und Informatik (eHL) / Prof. Nachrichtentechnik
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