New extraction method for FET extrinsic capacitances using active bias conditions
- A new procedure for extracting the extrinsic capacitances of FETs is presented. It requires measurements only in the active bias regime. The method utilizes the symmetry of the intrinsic FET in the forward and reverse biased operating regime. The extraction is performed analytically and does not require any optimization.
Author: | Friedrich LenkGND, Ralf Dörner |
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DOI: | https://doi.org/10.1109/MWSYM.1998.689374 |
ISBN: | 0-7803-4471-5 |
Title of the source (English): | IEEE MTT-S International Microwave Symposium digest, June 7 - 12, 1998, Baltimore Convention Center, Baltimore, Maryland |
Publisher: | IEEE Publication |
Place of publication: | Piscataway, NJ |
Document Type: | Conference Proceeding |
Language: | English |
Year of publication: | 1998 |
First Page: | 279 |
Last Page: | 282 |
Faculty/Chair: | Fakultät 3 Maschinenbau, Elektro- und Energiesysteme / FG Nachrichtentechnik |
Institution name at the time of publication: | Fakultät für Ingenieurwissenschaften und Informatik (eHL) / Prof. Nachrichtentechnik |