New extraction method for FET extrinsic capacitances using active bias conditions

  • A new procedure for extracting the extrinsic capacitances of FETs is presented. It requires measurements only in the active bias regime. The method utilizes the symmetry of the intrinsic FET in the forward and reverse biased operating regime. The extraction is performed analytically and does not require any optimization.

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Metadaten
Author: Friedrich LenkGND, Ralf Dörner
DOI:https://doi.org/10.1109/MWSYM.1998.689374
ISBN:0-7803-4471-5
Title of the source (English):IEEE MTT-S International Microwave Symposium digest, June 7 - 12, 1998, Baltimore Convention Center, Baltimore, Maryland
Publisher:IEEE Publication
Place of publication:Piscataway, NJ
Document Type:Conference Proceeding
Language:English
Year of publication:1998
First Page:279
Last Page:282
Faculty/Chair:Fakultät 3 Maschinenbau, Elektro- und Energiesysteme / FG Nachrichtentechnik
Institution name at the time of publication:Fakultät für Ingenieurwissenschaften und Informatik (eHL) / Prof. Nachrichtentechnik
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