DC and microwave properties of 0.5 um AlGaN/GaN high electron mobility transistors fabricated on 2-inch process line

  • DC and RF characteristics of AlGaN/GaN HEMTs processed by 2-inch stepper lithography are presented. The devices, grown by MOVPE on 2" sapphire wafers consist of: GaN buffer, Al0.25Ga0.75 N spacer, doped Al0.25Ga0.75N supply layer, Al0.25Ga0.75N barrier, GaN cap. Refractory source and gate contacts along with mesa isolation and air bridge technology are applied. Typical values for maximum saturation current, transconductance and pinch-off voltage are: 616 m/A/mm, 203 mS/mm, -3.5 V with very good homogeneity across 2". The cut off frequencies fT and fmax are 24 and 54 GHz respectively. A standard small signal equivalent circuit model exactly describes DC- and microwave properties

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Metadaten
Author: Jochen Hilsenbeck, Friedrich LenkGND, Richard Lossy, Joachim Würfl, K. Kohler, H. Obloh
DOI:https://doi.org/10.1109/ISCS.2000.947181
ISBN:0-7803-6258-6
Title of the source (English):IEEE International Symposium on Compound Semiconductors, held in Monterey, California, 2 - 5 October 2000
Publisher:IEEE Service Center
Place of publication:Piscataway, NJ
Document Type:Conference Proceeding
Language:English
Year of publication:2000
First Page:351
Last Page:356
Faculty/Chair:Fakultät 3 Maschinenbau, Elektro- und Energiesysteme / FG Nachrichtentechnik
Institution name at the time of publication:Fakultät für Ingenieurwissenschaften und Informatik (eHL) / Prof. Nachrichtentechnik
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