Low phase noise MMIC VCOs for Ka-band applications with improved GaInP/GaAs-HBT technology

  • We report on the technology and performance of fully monolithic coplanar voltage-controlled oscillators (VCOs) with GaInP/GaAs-HBTs as the active devices. With our optimized HBT process, the parasitic base resistance R/sub B/ and extrinsic base-collector capacitance C/sub EX/ are significantly reduced. In this way, the maximum frequency of oscillation F/sub max/ is increased from 100 to 170 GHz. This allows us to realize fundamental 38 GHz-VCOs with very low phase noise. At an oscillation frequency F/sub res/=34.2/spl plusmn/0.2 GHz, the VCO reaches phase noise levels of -87 dBc/Hz @ 100 kHz and -108 dBc/Hz @ 1 MHz offset frequency, respectively. To our knowledge, these phase noise values are the lowest GaAs data for Ka-band applications reported so far.

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Metadaten
Author: Jochen Hilsenbeck, Friedrich LenkGND, Wolfgang Heinrich, Joachim Würfl
DOI:https://doi.org/10.1109/GAAS.2003.1252399
ISBN:0-7803-7833-4
Title of the source (English):Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003, 25th Annual Technical Digest 2003, San Diego, California, November 9 - 12, 2003
Publisher:IEEE Service Center
Place of publication:Piscataway, NJ
Document Type:Conference Proceeding
Language:English
Year of publication:2003
First Page:223
Last Page:226
Faculty/Chair:Fakultät 3 Maschinenbau, Elektro- und Energiesysteme / FG Nachrichtentechnik
Institution name at the time of publication:Fakultät für Ingenieurwissenschaften und Informatik (eHL) / Prof. Nachrichtentechnik
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