A 3.2 W coplanar single-device X-band amplifier with GaAs HBT
- High-power GaInP/GaAs HBTs with high breakdown voltage for X-band applications are presented. To demonstrate the capabilities of these devices, a simple monolithic amplifier is realized. For a single 12-finger device with 2/spl times/70 /spl mu/m/sup 2/ emitter finger size, an output power of 3.2 W at 9 GHz with 47% PAE is achieved.
Author: | Friedrich LenkGND, Harald Klockenhoff, Andre Maaßdorf, Joachim Würfl, Wolfgang Heinrich |
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URL: | http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=1637147 |
ISBN: | 88-902012-0-7 |
Title of the source (English): | Gallium Arsenide and Other Semiconductor Application Symposium, 2005, EGAAS 2005 |
Publisher: | Horizon House Publ. |
Place of publication: | London |
Document Type: | Conference Proceeding |
Language: | English |
Year of publication: | 2005 |
First Page: | 49 |
Last Page: | 52 |
Faculty/Chair: | Fakultät 3 Maschinenbau, Elektro- und Energiesysteme / FG Nachrichtentechnik |
Institution name at the time of publication: | Fakultät für Ingenieurwissenschaften und Informatik (eHL) / Prof. Nachrichtentechnik |