Transferred substrate DHBT of ft = 410 GHz and fmax = 480 GHz for traveling wave amplifiers
- We report a MMIC process in transferred substrate technology. The transistors of 0.8 times 5 mum2 emitter size feature ft = 410 GHz and fmax = 480 GHz at BVceo = 5.5 V. Traveling wave amplifiers of 12 dB broadband gain up to fc = 70 GHz were realized.
Author: | Thorsten Kraemer, Chafik Meliani, Friedrich LenkGND, Joachim Würfl, Günther Tränkle |
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DOI: | https://doi.org/10.1109/ICIPRM.2008.4702999 |
ISBN: | 978-1-4244-2258-6 |
ISBN: | 978-1-4244-2259-3 |
Title of the source (English): | Indium Phosphide and Related Materials, 2008, IPRM 2008, 20th International Conference, Versailles, France, 25 - 29 May 2008 |
Document Type: | Scientific journal article not peer-reviewed |
Language: | English |
Year of publication: | 2008 |
First Page: | 1 |
Last Page: | 3 |
Faculty/Chair: | Fakultät 3 Maschinenbau, Elektro- und Energiesysteme / FG Nachrichtentechnik |
Institution name at the time of publication: | Fakultät für Ingenieurwissenschaften und Informatik (eHL) / Prof. Nachrichtentechnik |