Quantum size effects in TiO2 thin films grown by atomic layer deposition

  • We study the atomic layer deposition of TiO2 by means of X-ray absorption spectroscopy. The Ti precursor, titanium isopropoxide, was used in combination with H2O on Si/SiO2 substrates that were heated at 200 °C. The low growth rate (0.15 Å/cycle) and the in situ characterization permitted to follow changes in the electronic structure of TiO2 in the sub-nanometer range, which are influenced by quantum size effects. The modified electronic properties may play an important role in charge carrier transport and separation, and increase the efficiency of energy conversion systems.

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Metadaten
Author: Massimo TallaridaORCiD, Chittaranjan DasORCiD, Dieter SchmeißerORCiD
DOI:https://doi.org/10.3762/bjnano.5.7
ISSN:2190-4286
Title of the source (English):Beilstein Journal of Nanotechnology
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2014
Tag:X-ray absorption spectroscopy (XAS); atomic layer deposition (ALD); charge transfer multiplet; covalency; energy conversion; quantum size effects; titanium dioxide (TiO2); water splitting
Issue number:5
First Page:77
Last Page:82
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie
Institution name at the time of publication:Fakultät für Mathematik, Naturwissenschaften und Informatik (eBTU) / LS Angewandte Physik / Sensorik
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