Multiple Auger processes in Graphene

  • Resonant Auger decay processes have been studied by resonant photoemission spectroscopy (resPES) and X-ray absorption spectroscopy (XAS) in Graphene systems. The pi*-resonance is used to identify the degree of localization of the lowest pi*-orbitals in the conduction band. Localization and lifetime of the photo-excited intermediate state cause the formation of multiple Auger processes. For the Graphene systems we identify two novel Auger decay combinations with a four hole final state: the (S+S) and the(S+S)* decay. We demonstrate that these processes are sensitive for interlayer coupling and interactions with the metallic free electrons of the substrate.

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Metadaten
Author: Matthias RichterGND, Ulrich Starke, Dieter SchmeißerORCiD
DOI:https://doi.org/10.1016/j.elspec.2013.12.009
ISSN:0368-2048
Title of the source (English):Journal of Electron Spectroscopy and Related Phenomena
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2014
Tag:Graphene; X-Ray absorption spectroscopy; XAS; multiple hole Auger; resPES; resonant photoemission spectroscopy
Issue number:Vol. 192
First Page:1
Last Page:6
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie
Institution name at the time of publication:Fakultät für Mathematik, Naturwissenschaften und Informatik (eBTU) / LS Angewandte Physik / Sensorik
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