Multiple Auger processes in Graphene
- Resonant Auger decay processes have been studied by resonant photoemission spectroscopy (resPES) and X-ray absorption spectroscopy (XAS) in Graphene systems. The pi*-resonance is used to identify the degree of localization of the lowest pi*-orbitals in the conduction band. Localization and lifetime of the photo-excited intermediate state cause the formation of multiple Auger processes. For the Graphene systems we identify two novel Auger decay combinations with a four hole final state: the (S+S) and the(S+S)* decay. We demonstrate that these processes are sensitive for interlayer coupling and interactions with the metallic free electrons of the substrate.
Author: | Matthias RichterGND, Ulrich Starke, Dieter SchmeißerORCiD |
---|---|
DOI: | https://doi.org/10.1016/j.elspec.2013.12.009 |
ISSN: | 0368-2048 |
Title of the source (English): | Journal of Electron Spectroscopy and Related Phenomena |
Document Type: | Scientific journal article peer-reviewed |
Language: | English |
Year of publication: | 2014 |
Tag: | Graphene; X-Ray absorption spectroscopy; XAS; multiple hole Auger; resPES; resonant photoemission spectroscopy |
Issue number: | Vol. 192 |
First Page: | 1 |
Last Page: | 6 |
Faculty/Chair: | Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie |
Institution name at the time of publication: | Fakultät für Mathematik, Naturwissenschaften und Informatik (eBTU) / LS Angewandte Physik / Sensorik |